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By Norlida Kamarulzaman, Wong Tin Wui, Sabirin Mohamed, Roshidah Rusdi, Nor Fadilah Chayed

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Fu, Z. Song, G. Wu, J. Huang, X. Duo and C. Lin: J. Sol-Gel. & Sci. Techol. 16 (1999), p. 277-281 A. Kumar and J. Kumar: Sol. State. Comm. 147 (2008), p. V. S. Sunandana: J. Mater. Sci. 43 (2008), p. J. B. Zhao: Mater. Sci. Eng. B. T. A. Mohamed: Eng. & Tech. journal. 28 (2010), p. 723 H. K. Rumaiz, M. Schulz, D. Wang, R. Rock, C. P. Huang and S. I. Shah: Mater. Sci. Eng. B. uk Keywords: Quasicrystal, surface, scanning tunneling microscopy Abstract. A brief review is presented of quasicrystal surfaces and their use as templates for exotic epitaxial structures.

Sci. 43 (2008), p. J. B. Zhao: Mater. Sci. Eng. B. T. A. Mohamed: Eng. & Tech. journal. 28 (2010), p. 723 H. K. Rumaiz, M. Schulz, D. Wang, R. Rock, C. P. Huang and S. I. Shah: Mater. Sci. Eng. B. uk Keywords: Quasicrystal, surface, scanning tunneling microscopy Abstract. A brief review is presented of quasicrystal surfaces and their use as templates for exotic epitaxial structures. The review is illustrated with several examples from the work of the Liverpool quasicrystal group. Introduction Quasicrystals were discovered in 1982 [1].

Therefore, these covalent compounds can be transformed either through chemical shifts or under pressure into a denser structure, which may be ionic or metallic. Hence, to discuss the results of the electronic properties, it is possible to tune the band gaps using pressure. The fundamental band gaps for Si. At ambient and high pressure compared with other values are listed in Table 1, where an agreement between our results and those of others [16,17] is found. Due to these small values, these compounds have been classified as narrow band gaps semiconductors.

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